TLC272

芯片信息

型号 封装 在线定购
TLC272CDR(查看) SOIC8
TLC272CP(查看) PDIP8

引脚布局

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技术资料—— TLC272 PDF技术资料

TLC272 概述

The TLC272 precision dual operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high input impedance, low noise, and speeds approaching those of general-purpose BiFET devices.

The TLC272 use Texas Instruments silicon-gate LinCMOS™ technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.

The C-suffix TLC272 are characterized for operation from 0°C to 70°C. The I-suffix TLC272 are characterized for operation from –40°C to 85°C.

TLC272 参数
TLC272 基本参数
SR   3.6 V/μs
GBW   1.7 MHz
VIO   10 mV
IIB   600 pA
TLC272 其他特性
电源电压(单/双±)   3V~16V,
±1.5V~8V
Channels   2
工作温度   C, I
TLC272 封装与引脚
PDIP8, SOIC8

TLC272 特性

  • Input Offset Voltage Drift: Typically 0.1 uV/Month, Including the First 30 Days
  • Wide Range of Supply Voltages Over Specified Temperature Range:
           0°C to 70°C: 3 V to 16 V
           –40°C to 85°C: 4 V to 16 V
           –55°C to 125°C: 4 V to 16 V
  • Single-Supply Operation
  • Common-Mode Input Voltage Range Extends Below the Negative Rail (C-Suffix, I-Suffix types)
  • Low Noise: Typically 25 nV/√Hz at f = 1 kHz
  • Output Voltage Range Includes Negative Rail
  • High Input impedance: 1012Ω Typ
  • ESD-Protection Circuitry
  • Small-Outline Package Option Also Available in Tape and Reel
  • Designed-In Latch-Up Immunity